Process for forming field isolation

US5432118A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Marius Orlowski · Meylan, FR
• Karl Wimmer · Meitingen, DE

Key dates

• Filing date: Jun 28, 1994
• Grant date: Jul 11, 1995
• Expiry date: Jun 28, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Field isolation regions are formed using oxidation-resistant spacers or plugs that completely fill trenches within a semiconductor substrate prior to forming the field isolation regions. The spacers or plugs help to reduce encroachment of the field isolation regions under the spacers or plugs. The structure used as an oxidation mask for the field isolation process may include a silicon-containing member that is thicker than an overlying oxidation-resistant member. The thicker silicon-containing member may be capable of tolerating higher stress before defects in an underlying pad layer or substrate are formed.