Method for producing a laterally limited single-crystal region with selective epitaxy and the employment thereof for manufacturing a bipolar transistor as well as a MOS transistor

US5432120A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Thomas Meister · Taufkirchen, DE
• Reinhard Stengl · Stadtbergen, DE

Key dates

• Filing date: Nov 19, 1993
• Grant date: Jul 11, 1995
• Expiry date: Nov 19, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0278
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

For producing a laterally limited, single-crystal region on a substrate, for example the collector of a bipolar transistor or the active region of a MOS transistor, a mask layer having an opening is produced on the surface of a substrate. The surface of the substrate is exposed within the opening. The cross-section of the opening parallel to the surface of the substrate at the surface of the substrate projects laterally beyond that cross-section at the surface of the mask layer. The sidewall of the opening proceeds essentially perpendicularly relative to the surface of the substrate in the region of the surface of the mask layer and has a step-shaped profile in cross-section perpendicularly relative to the surface of the substrate. The single-crystal region is formed by selective epitaxy within the opening.