Thomas Meister
26Patents
10h-index
15Co-inventors
72Inventor score
Filing activity: Jul 24, 1991 → Dec 8, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5432120A | Method for producing a laterally limited single-crystal region with selective epitaxy and the employment thereof for manufacturing a bipolar transistor as well as a MOS transistor | Electricity | 86 | Expired |
| US5193375A | Method for enhancing the wear performance and life characteristics of a brake drum | Chemistry; Metallurgy | 20 | Expired |
| US5643836A | Method for producing a semiconductor layer structure having a planarized surface and the use thereof in the manufacture of bipolar transistors and DRAMS | Electricity | 19 | Expired |
| US8067290B2 | Bipolar transistor with base-collector-isolation without dielectric | Electricity | 17 | Active |
| US5422303A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5326718A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7449389B2 | Method for fabricating a semiconductor structure | Electricity | 15 | Active |
| US5177582A | CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same | Electricity | 14 | Expired |
| US5498567A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5402002A | Bipolar transistor with reduced base/collector capacitance | Electricity | 13 | Expired |
| US7719088B2 | High-frequency bipolar transistor | Electricity | 7 | Expired |
| US7371650B2 | Method for producing a transistor structure | Electricity | 7 | Expired |
| US7612430B2 | Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor | Electricity | 7 | Expired |
| US7105415B2 | Method for the production of a bipolar transistor | Electricity | 7 | Expired |
| US6635545B2 | Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor | Electricity | 6 | Expired |
| US7420228B2 | Bipolar transistor comprising carbon-doped semiconductor | Electricity | 6 | Expired |
| US7285470B2 | Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor component | Electricity | 5 | Expired |
| US8003475B2 | Method for fabricating a transistor structure | Electricity | 3 | Active |
| US7968972B2 | High-frequency bipolar transistor and method for the production thereof | Electricity | 3 | Active |
| US6867105B2 | Bipolar transistor and method of fabricating a bipolar transistor | Electricity | 2 | Expired |
| US7064360B2 | Bipolar transistor and method for fabricating it | Electricity | 2 | Expired |
| US8102052B2 | Process for the simultaneous deposition of crystalline and amorphous layers with doping | Electricity | 1 | Active |
| US7135757B2 | Bipolar transistor | Electricity | 1 | Expired |
| US7947552B2 | Process for the simultaneous deposition of crystalline and amorphous layers with doping | Electricity | 1 | Active |
| US8329532B2 | Process for the simultaneous deposition of crystalline and amorphous layers with doping | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.