Fabrication process of compound semiconductor device comprising L-shaped gate electrode
US5432126A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Sep 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a silicon oxide layer and an amorphous silicon layer on a GaAs substrate in stacking manner, a gate electrode forming opening portion is formed by RIE etching. Then, by selectively removing only the amorphous silicon layer at the portion contacting with the opening portion at the side of the source electrode, a WSi.cndot.TiN.cndot.Pt layer is formed within the opening portion. Subsequently, after applying an organic photoresist layer, an entire surface is etched back to remove at least the WSi.cndot.TiN.cndot.Pt layer above the amorphous silicon layer. Then, by using the WSi.cndot.TiN.cndot.Pt layer remaining in the opening portion as a plating electrode, an Au layer is plated to form a reversed L-shaped gate electrode with an overhanging portion only extending toward the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.