Hirokazu Oikawa
7Patents
5h-index
11Co-inventors
56Inventor score
Filing activity: Sep 7, 1994 → Sep 11, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6627473B1 | Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof | Electricity | 117 | Expired |
| US7834461B2 | Semiconductor apparatus | Electricity | 19 | Active |
| US5432126A | Fabrication process of compound semiconductor device comprising L-shaped gate electrode | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6159861A | Method of manufacturing semiconductor device | Electricity | 16 | Expired |
| US6078067A | Semiconductor device having mutually different two gate threshold voltages | Electricity | 15 | Expired |
| US5922623A | Hydrogen fluoride vapor phase selective etching method for fabricating semiconductor devices | Electricity | 3 | Expired |
| US6514872B1 | Method of manufacturing a semiconductor device | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.