Reliability enhancement of aluminum interconnects by reacting aluminum leads with a strengthening gas
US5432128A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 27, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | May 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention encompasses using a strengthened shell to enhance reliability of aluminum leads of a semiconductor device. The invention includes depositing an aluminum layer on a substrate 12, etching the aluminum layer in a predetermined pattern to form aluminum leads 16, exposing the aluminum leads 16 to a strengthening gas to react and form a strengthened shell 18 on the aluminum leads 16, and depositing a dielectric layer 20 over the strengthened shell 18 and the substrate 12. The strengthening gas may contain nitrogen, oxygen, or both. The exposing step may also comprise a rapid thermal anneal, and the dielectric layer 20 is preferably comprised of a material having a dielectric constant of less than 3. An advantage of the invention is to mechanically strengthen the aluminum leads of a semiconductor wafer. In addition, it is an intrinsic operation, rather than extrinsic; the basic material required is already present on the wafer, it is merely altered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.