Robert Tsu
25Patents
15h-index
28Co-inventors
77Inventor score
Filing activity: May 27, 1994 → Jan 20, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6294420A | Integrated circuit capacitor | Electricity | 211 | Expired |
| US5731220A | Method of making barium strontium titanate (BST) thin film by erbium donor doping | Electricity | 74 | Expired |
| US6096597A | Method for fabricating an integrated circuit structure | Electricity | 62 | Expired |
| US5617290A | Barium strontium titanate (BST) thin films using boron | Emerging Cross-Sectional Technologies | 47 | Expired |
| US5573979A | Sloped storage node for a 3-D dram cell structure | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6168985A | Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing same | Electricity | 35 | Expired |
| US6696337B2 | Method of manufacturing a semiconductor integrated circuit device having a memory cell array and a peripheral circuit region | Electricity | 32 | Expired |
| US6207561A | Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6461955B1 | Yield improvement of dual damascene fabrication through oxide filling | Electricity | 28 | Expired |
| US5432128A | Reliability enhancement of aluminum interconnects by reacting aluminum leads with a strengthening gas | Electricity | 28 | Expired |
| US5635741A | Barium strontium titanate (BST) thin films by erbium donor doping | Electricity | 25 | Expired |
| US5453908A | Barium strontium titanate (BST) thin films by holmium donor doping | Electricity | 22 | Expired |
| US8912769B2 | Current mode buck-boost converter | Electricity | 22 | Active |
| US5972769A | Self-aligned multiple crown storage capacitor and method of formation | Electricity | 21 | Expired |
| US6037207A | Method of manufacturing semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity | Electricity | 19 | Expired |
| US6693356B2 | Copper transition layer for improving copper interconnection reliability | Electricity | 15 | Expired |
| US6951812B2 | Copper transition layer for improving copper interconnection reliability | Electricity | 13 | Expired |
| US6528888B2 | Integrated circuit and method | Electricity | 12 | Expired |
| US5609927A | Processing methods for high-dielectric-constant materials | Electricity | 11 | Expired |
| US6653676B2 | Integrated circuit capacitor | Electricity | 9 | Expired |
| US7402514B2 | Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer | Electricity | 9 | Expired |
| US6331325A | Barium strontium titanate (BST) thin films using boron | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6417045B1 | Method of manufacturing a semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity | Electricity | 3 | Expired |
| US6194292A | Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6060354A | In-situ doped rough polysilicon storage cell structure formed using gas phase nucleation | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.