Plasma process apparatus including ground electrode with protection film
US5432315A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Feb 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma processing apparatus includes a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced, a sample table, disposed in the vacuum chamber, to which an AC voltage is applied, a microwave generating device for generating microwaves and introducing the microwaves towards a surface to be processed of a sample located on the sample table, a magnetic field generating device for generating a magnetic field in the vacuum chamber, an insulator disposed on a part of the vacuum chamber exposed to a plasma produced in the vacuum chamber by interaction of the processing gas, the microwaves, and the magnetic field, and a ground electrode disposed in the vacuum chamber at a place which is on a microwave introduction side of the vacuum chamber with respect to the surface of the sample table on which the sample is placed, a surface of the ground electrode being covered by a semiconducting thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.