Compound semicondutor light-emitting device
US5432808A · kind A · utility
108Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Mar 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga.sub.x Al.sub.y In.sub.1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.