Deposit film forming apparatus with microwave CVD method
US5433790A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1994 |
| Grant date | Jul 18, 1995 |
| Priority date | — |
| Expiry date | Nov 18, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32238
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A deposit film forming apparatus is disclosed. Cylindrical substrates are disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means is provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, apply the voltage to an electrode provided on said discharge space, and form a deposit film on a surface of said substrate, characterized in that said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transmitting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (.epsilon.) and a dielectric loss tangent (tan .delta.) at a frequency of used microwave is equal to or less than 2.times.10.sup.-2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.