Oxidation of silicon nitride in semiconductor devices
US5434109A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1993 |
| Grant date | Jul 18, 1995 |
| Priority date | — |
| Expiry date | Apr 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600.degree. C. is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF.sub.3 is the fluorine-containing compound, and a temperature greater than about 700.degree. C. at a concentration of between about 100 to 1000 ppm is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.