Jerome B. Lasky
24Patents
12h-index
45Co-inventors
81Inventor score
Filing activity: Jul 27, 1977 → Apr 22, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4601779A | Method of producing a thin silicon-on-insulator layer | Electricity | 92 | Expired |
| US5291439A | Semiconductor memory cell and memory array with inversion layer | Electricity | 90 | Expired |
| US5675185A | Semiconductor structure incorporating thin film transistors with undoped cap oxide layers | Electricity | 86 | Expired |
| US4755478A | Method of forming metal-strapped polysilicon gate electrode for FET device | Electricity | 79 | Expired |
| US5434109A | Oxidation of silicon nitride in semiconductor devices | Electricity | 63 | Expired |
| US4735679A | Method of improving silicon-on-insulator uniformity | Emerging Cross-Sectional Technologies | 54 | Expired |
| US5226732A | Emissivity independent temperature measurement systems | Physics | 51 | Expired |
| US4649627A | Method of fabricating silicon-on-insulator transistors with a shared element | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4558508A | Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step | Emerging Cross-Sectional Technologies | 40 | Expired |
| US4532700A | Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer | Emerging Cross-Sectional Technologies | 38 | Expired |
| US4379727A | Method of laser annealing of subsurface ion implanted regions | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6541351B1 | Method for limiting divot formation in post shallow trench isolation processes | Electricity | 30 | Expired |
| US5888875A | Diffusion resistor structure with silicided contact areas, and methods of fabrication thereof | Electricity | 12 | Expired |
| US6255179A | Plasma etch pre-silicide clean | Electricity | 11 | Expired |
| US6472232B1 | Semiconductor temperature monitor | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6184132A | Integrated cobalt silicide process for semiconductor devices | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4121010A | Thermoluminescent phosphor | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6121064A | STI fill for SOI which makes SOI inspectable | Electricity | 7 | Expired |
| US7405139B2 | Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch | Electricity | 6 | Active |
| US4173660A | Method of preparing a thermoluminescent phosphor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6638629B2 | Semiconductor temperature monitor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7495254B2 | Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices | Electricity | 2 | Expired |
| US7989358B2 | Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch | Electricity | 0 | Active |
| US6793735B2 | Integrated cobalt silicide process for semiconductor devices | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.