Radiation imager with common passivation dielectric for gate electrode and photosensor

US5435608A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Ching-Yeu Wei · Niskayuna, US
• Roger S. Salisbury · Schenectady, US
• Robert F. Kwasnick · Palo Alto, US
• Brian W. Giambattista · Scotia, US

Key dates

• Filing date: Jun 17, 1994
• Grant date: Jul 25, 1995
• Expiry date: Jun 17, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/958

Abstract

A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.