Shallow SIMOX processing method using molecular ion implantation
US5436175A · kind A · utility
61Cited by
10References
6Claims
0Family size
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Key dates
| Filing date | Jul 27, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Jul 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of forming shallow SIMOX (Separation by IMplantation of OXygen) substrates by implantation of molecular oxygen ions (O.sub.2 +), instead of implanting atomic oxygen ions (O+) as is done in prior art SIMOX processes. Use of molecular oxygen ions (O.sub.2 +) doubles the yield of oxygen atoms implanted for each unit of electric charge deposited in the wafer. The resultant structure, after annealing, has a defect density which is not substantially different from SIMOX processing using atomic oxygen ions (O+). An alternative method for implanting molecular nitrogen ions is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.