Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth
US5436192A · kind A · utility
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13References
25Claims
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Key dates
| Filing date | Sep 5, 1990 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Sep 5, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The technique of induced evaporation enhancement is used in MOCVD to accomplish geometrical variations via atomic level removal or thinning or negative growth techniques in situ during or after epitaxial growth thereby varying optical and electrical properties of fabricated semiconductor structures during growth. Among the structures capable of being fabricated are three dimensional buried heterostructures, transparent window lasers, multiple wavelength array lasers, index guided and antiguided mechanisms and transparent optical waveguide structures for optical signal coupling in integrated circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.