MOS-type semiconductor device and method of making the same
US5436481A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1994 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Jan 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS semiconductor device and a method of making the same are arranged to include a semiconductor substrate of a first conductivity type; a pair of impurity diffused layers of a second conductivity type different from the first conductivity type formed in the semiconductor substrate and mutually separated by a distance of 0.1 .mu.m or less; a gate insulating film including at least two layers of a silicon oxide film and a silicon nitride film and formed on a portion of the semiconductor substrate disposed between the pair of impurity diffused layers; and a gate electrode formed on the gate insulating film, wherein preferably the silicon nitride film has a thickness of 4.5 nm to 14.86 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.