Yuichi Egawa
9Patents
7h-index
8Co-inventors
52Inventor score
Filing activity: Oct 28, 1992 → Jul 31, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5436481A | MOS-type semiconductor device and method of making the same | Electricity | 131 | Expired |
| US5424978A | Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same | Physics | 127 | Expired |
| US6917076B2 | Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device | Electricity | 17 | Expired |
| US6657229B1 | Semiconductor device having multiple transistors sharing a common gate | Electricity | 16 | Expired |
| US6118145A | Semiconductor device and manufacturing method thereof | Electricity | 11 | Expired |
| US6066886A | Semiconductor wafer in which redundant memory portion is shared by two neighboring semiconductor memory portions and is connected to the semiconductor memory portions | Electricity | 11 | Expired |
| US5770874A | High density semiconductor memory device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5313418A | Semiconductor memory and memorizing method to read only semiconductor memory | Physics | 6 | Expired |
| US5438214A | Metal oxide semiconductor device having a common gate electrode for N and P channel MOS transistors | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.