High voltage MIS transistor and semiconductor device
US5436486A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1993 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Oct 18, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
A high voltage MIS transistor includes a well region of a second conduction type formed by a step of injecting ions from the surface side of a semiconductor substrate of a first conduction type and a thermal diffusion step after the ion injecting step; an MIS part including a base layer of a first conduction type formed in one end portion of the well region, a base contact layer of a first conduction type which is formed in the base layer of a first conduction type and to which an emitter potential is applied, and a gate electrode provided so as to extend from an emitter layer of a second conduction type to the well region through an insulation gate film; and, a collector part including a base layer of a second conduction type formed in the other end portion of the well region, a collector layer of a first conduction type formed in the base layer of a second conduction type, and a high concentration contact layer of a first conduction type which is formed in the collector layer and to which a collector potential is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.