Gen Tada
21Patents
8h-index
15Co-inventors
68Inventor score
Filing activity: Oct 18, 1993 → Jun 9, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5497021A | CMOS structure with varying gate oxide thickness and with both different and like conductivity-type gate electrodes | Electricity | 82 | Expired |
| US5545577A | Method of producing a semiconductor device having two MIS transistor circuits | Electricity | 62 | Expired |
| US5436486A | High voltage MIS transistor and semiconductor device | Electricity | 54 | Expired |
| US5432370A | High withstand voltage M I S field effect transistor and semiconductor integrated circuit | Electricity | 35 | Expired |
| US6525390B2 | MIS semiconductor device with low on resistance and high breakdown voltage | Electricity | 25 | Expired |
| US5612564A | Semiconductor device with limiter diode | Electricity | 19 | Expired |
| US5495122A | Insulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltages | Electricity | 19 | Expired |
| US5973366A | High voltage integrated circuit | Electricity | 15 | Expired |
| US6740952B2 | High withstand voltage semiconductor device | Electricity | 4 | Expired |
| US6316794A | Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region | Electricity | 3 | Expired |
| US6853034B2 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Electricity | 3 | Expired |
| US6558983B2 | Semiconductor apparatus and method for manufacturing the same | Electricity | 2 | Expired |
| US7173454B2 | Display device driver circuit | Physics | 2 | Expired |
| US7606082B2 | Semiconductor circuit, inverter circuit, semiconductor apparatus, and manufacturing method thereof | Electricity | 1 | Active |
| US7876291B2 | Drive device | Physics | 1 | Active |
| US7687385B2 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Electricity | 1 | Active |
| US6844598B2 | Lateral high breakdown voltage MOSFET and device provided therewith | Electricity | 1 | Expired |
| US6818954B2 | Lateral high breakdown voltage MOSFET and device provided therewith | Electricity | 0 | Expired |
| US7195980B2 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Electricity | 0 | Expired |
| US7714363B2 | Semiconductor integrated circuit for driving the address of a display device | Electricity | 0 | Active |
| US9401319B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.