Method of making a semiconductor memory device having a capacitor
US5438013A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1993 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Aug 26, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A capacitor of a semiconductor memory device having a greater cell capacitance than a double-cylindrical capacitor and an improved method for manufacturing the same are disclosed. A first conductive layer is formed on a semiconductor substrate and then first and second material layers are formed on the first conductive layer. The first material and second material layers are patterned to form a composite pattern comprised of a precursory first material pattern and a second material pattern. The precursory first material pattern is anisotropically etched to form a first material pattern smaller than the second material pattern. Here, an undercut portion under the second material pattern is created. Then, the first conductive layer is anisotropically and partially etched to form a first conductive layer pattern having a groove defining a protruding stepped portion into an individual cell unit. After forming a first spacer on the sidewall of the first material pattern and a second spacer on the sidewall of the groove, the first conductive layer pattern is anisotropically etched to thereby form a double-cylindrical electrode. A double-cylindrical storage electrode can be simply manufac…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.