Metal oxide semiconductor device having a common gate electrode for N and P channel MOS transistors
US5438214A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 1994 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | May 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
Abstract
A semiconductor device and a method of fabricating the semiconductor device are disclosed in which the method comprises the steps of forming an insulating film for element-isolation and a gate insulating film on a surface of a semiconductor substrate, forming a semiconductor film on the element-isolation insulating film and the gate insulating film, removing a part of the semiconductor film corresponding to a boundary between a first region for formation of an N-channel transistor and a second region for formation of a P-channel transistor, introducing N type impurities into a part of the semiconductor film located on the first region and introducing P type impurities into a part of the semiconductor film located on the second region, forming a metallic film over the semiconductor film having the impurities introduced therein and the element-isolation insulating film, and patterning the metallic film and the semiconductor film into a pattern of a gate electrode common to the N-channel transistor and the P-channel transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.