Dual polarization laser diode with quaternary material system
US5438584A · kind A · utility
64Cited by
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27Claims
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Key dates
| Filing date | Dec 23, 1993 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | Dec 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser source using a strained active layer of GaAsP or InGaAsP or AlGaAsP to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range of 600-870 nm. Preferably, the active layer is flanked by confining layers of AlGaAs or (AlGa).sub.0.52 In.sub.0.48 P. The active layer under proper conditions can also emit TE-polarized light. Hence, arrays of side-by-side orthoginally-polarized emitters, or switchable polarized emitters are feasible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.