Unstable resonator semiconductor laser
US5438585A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 1994 |
| Grant date | Aug 1, 1995 |
| Priority date | — |
| Expiry date | May 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3409
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode provides high optical power output in a single diffraction-limited farfield lobe using a conventional Fabry-Perot resonant cavity and a planar well graded index separate confinement heterostructure (QW-GRINSCH) active region. An antiguide region is optically coupled to the active region of the laser. In one embodiment, the antiguide region has a lateral variation in the effective index of refraction that forms a diverging medium that causes higher order optical modes to have higher losses in the resonant cavity. The waveguide medium preferably varies in thickness and the thickness approximates a parabolic function in the lateral direction. The antiguide region is enclosed by GaAs layers to minimize oxidation at material interfaces during device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.