Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer
US5438952A · kind A · utility
68Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Jan 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a compound semiconductor device includes the steps of supplying an amine-adduct of a compound that contains a constituent element of a crystal layer that forms the semiconductor device, to a substrate on which the semiconductor device is formed, as a source material of the crystal layer, decomposing the amine-adduct in the vicinity of the substrate such that the constituent element is released, and depositing the constituent element on the substrate to cause a growth of the crystal layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.