Nobuyuki Otsuka
50Patents
12h-index
46Co-inventors
84Inventor score
Filing activity: Jun 27, 1978 → Mar 28, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5438952A | Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer | Electricity | 68 | Expired |
| US4689979A | Pressing method and punch and die press for the same | Performing Operations; Transporting | 33 | Expired |
| US4379706A | Slidable-type constant velocity universal joint | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5319657A | Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof | Electricity | 27 | Expired |
| US6104738A | Semiconductor laser and process for producing the same | Electricity | 21 | Expired |
| US4196598A | Apparatus for prevention of the removal of a universal joint | Mechanical Engineering; Lighting; Heating | 19 | Expired |
| US5568501A | Semiconductor laser and method for producing the same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6110756A | Method for producing semiconductor laser | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4188803A | Constant velocity universal joint | Emerging Cross-Sectional Technologies | 17 | Expired |
| US4494941A | Constant velocity universal joint | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6151351A | Distributed feedback semiconductor laser and method for producing the same | Electricity | 13 | Expired |
| US4231232A | Constant velocity universal joint | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4578048A | Slidable type constant velocity universal joint | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5311534A | Semiconductor laser devices | Electricity | 11 | Expired |
| US7009216B2 | Semiconductor light emitting device and method of fabricating the same | Electricity | 10 | Expired |
| US6777253B2 | Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device | Electricity | 10 | Expired |
| US6858877B2 | Nitride semiconductor, method for manufacturing the same and nitride semiconductor device | Electricity | 10 | Expired |
| US5539766A | Distributed feedback semiconductor laser | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6586774B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 9 | Expired |
| US7160748B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 8 | Expired |
| US6090909A | Uv-ray-dimerized high molecular compound, liquid crystal aligning film using above high molecular compound and liquid crystal display element using above aligning film | Physics | 7 | Expired |
| US8866516B2 | Gate drive circuit | Electricity | 6 | Active |
| US7005680B2 | Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members | Electricity | 6 | Expired |
| US6778308B2 | Process of fabricating semiconductor light emitting device | Physics | 5 | Expired |
| US5308433A | Apparatus and method for vapor growth | Chemistry; Metallurgy | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.