Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5439840A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1993 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Aug 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.