Systems and methods for controlling the temperature and uniformity of a wafer during a SIMOX implantation process
US5440132A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Mar 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An implantation system (10) is provided that comprises a rotating drum (12) which holds a wafer chuck (28) which in turn holds a semiconductor wafer (26). The wafer chuck (28) rotates during the implantation of oxygen from an oxygen beam (24) created by a beam generator (22). The wafer chuck (28) is rotated via shaft (30) from a motor (32). The wafer chuck (28) also holds a thermal reflector (36) which allows for control of the temperature of the wafer during the implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.