High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
US5440173A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1993 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Sep 17, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
Abstract
A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800.degree. C. without destroying the electrical connection between the silicon substrate and components connected to the platinum conductor. The present invention utilizes a TiN or TiW buffer layer to connect the platinum conductor to the silicon substrate. The buffer layer is deposited as a single crystal on the silicon substrate. The platinum layer is then deposited on the buffer layer. The region of the platinum layer in contact with the buffer layer is also a single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.