Variable delay circuit
US5440260A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Jun 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/163
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The gate of a CMOS transistor formed by a series connection of p-channel and n-channel FETs 21 and 22 is connected to an input terminal 23, and the drain of the CMOS transistor is connected to an output terminal 24. The source of the FET 21 is connected to a positive power supply terminal 20 via parallel-connected switchable resistance elements 37.sub.0, 37.sub.1, 37.sub.2, . . formed by p-channel FETs and having resistance values R.sub.0, R.sub.1, R.sub.2, . . . , respectively. The source of the other FET 22 is connected to a negative power supply terminal 30 via parallel-connected switchable resistance elements 38.sub.0, 38.sub.1, 38.sub.2, . . . formed by n-channel FETs and having resistance values R.sub.0, R.sub.1, R.sub.2, . . . , respectively. Delay setting signals S.sub.0, S.sub.1, . . . are decoded by a decoder 39 and one of more of its output terminals Y.sub.0, Y.sub.1 , . . . go to the high level. The output terminals Y.sub.0, Y.sub.1, Y.sub.2, . . . are connected directly to the gates of the FETs forming the resistance elements 38.sub.0, 38.sub.1, 38.sub.2, . . . , respectively, and are connected to the gates of the FETs of the resistance elements 37.sub.0, 37.sub.1, 37.…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.