Article comprising a semiconductor laser with stble facet coating
US5440575A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1994 |
| Grant date | Aug 8, 1995 |
| Priority date | — |
| Expiry date | Apr 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such "non-hermetic" lasers comprise facet coatings that comprise a dielectric layer that has very low water saturation value. In preferred embodiments this dielectric layer is SiO.sub.x (1.ltoreq.x<2), deposited by a molecular beam method. Deposition conditions are selected to result in a dense material that is largely free of particulates and blisters, and is substantially impermeable to moisture. Among the deposition conditions is substantially normal beam incidence, and a relatively low deposition rate. Deposition is advantageously carried out under relatively high vacuum conditions. A quantitative method of determining the water level in a SiO.sub.x film is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.