Silicon to sapphire bond
US5441591A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1993 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Jun 7, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding silicon to sapphire may be performed at room temperature and with no greater pressure than that due to one wafer resting on another. The method comprises the steps of polishing one side of a flat sapphire wafer to a mirror-like surface; polishing one side of a flat silicon wafer to a mirror-like surface; cleaning the wafers and then stacking the wafers so that their corresponding mirror-like surfaces contact. The room temperature bonding that occurs is relatively strong, and the bonded wafers can be handled without danger of their becoming unbonded. If desired, the bonded wafers may be subjected to further processing to further strengthen their bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.