Method for forming a stable plasma
US5441596A · kind A · utility
19Cited by
4References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 27, 1994 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Jul 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a stable plasma, particularly in the high power and low pressure ranges. The method may be used in a plasma system such as that used for a plasma etch. First, the radio frequency power is turned on under low power and high pressure. The plasma is allowed to stabilize without tuning. Next, the pressure is dropped to the desired operating level and the tuning system is engaged. After tuning at the low power and low pressure, the radio frequency power is ramped to the desired level. Finally, the system is again tuned at the higher power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.