James E. Nulty
18Patents
9h-index
25Co-inventors
68Inventor score
Filing activity: Sep 26, 1989 → Jan 11, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5468342A | Method of etching an oxide layer | Emerging Cross-Sectional Technologies | 347 | Expired |
| US5562801A | Method of etching an oxide layer | Electricity | 131 | Expired |
| US5013400A | Dry etch process for forming champagne profiles, and dry etch apparatus | Electricity | 65 | Expired |
| US5045149A | Method and apparatus for end point detection | Physics | 36 | Expired |
| US4954212A | Endpoint detection system and method for plasma etching | Electricity | 26 | Expired |
| US6066555A | Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning | Electricity | 21 | Expired |
| US5441596A | Method for forming a stable plasma | Electricity | 19 | Expired |
| US6847218B1 | Probe card with an adapter layer for testing integrated circuits | Physics | 17 | Expired |
| US6372634B1 | Plasma etch chemistry and method of improving etch control | Electricity | 15 | Expired |
| US6165375A | Plasma etching method | Electricity | 9 | Expired |
| US6784552B2 | Structure having reduced lateral spacer erosion | Electricity | 7 | Expired |
| US7332921B2 | Probe card and method for constructing same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6406640B1 | Plasma etching method | Electricity | 6 | Expired |
| US6214743A | Method and structure for making self-aligned contacts | Electricity | 6 | Expired |
| US7112975B1 | Advanced probe card and method of fabricating same | Electricity | 5 | Expired |
| US6373679B1 | ELECTROSTATIC OR MECHANICAL CHUCK ASSEMBLY CONFERRING IMPROVED TEMPERATURE UNIFORMITY ONTO WORKPIECES HELD THEREBY, WORKPIECE PROCESSING TECHNOLOGY AND/OR APPARATUS CONTAINING THE SAME, AND METHOD(S) FOR HOLDING AND/OR PROCESSING A WORKPIECE WITH THE SAME | Electricity | 4 | Expired |
| US7685705B2 | Method of fabricating a probe card | Emerging Cross-Sectional Technologies | 1 | Active |
| US6890860B1 | Method for etching and/or patterning a silicon-containing layer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.