Semiconductor device
US5442210A · kind A · utility
18Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 28, 1993 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Oct 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device has a DRAM portion forming a cache memory and a flash memory portion fabricated on a common substrate, fabricated by a process based on the process of fabricating the flash memory portion. An electrode layer common to capacitors of the DRAM portion and a floating gate layer of the flash memory portion are formed simultaneously from the same material. An electrode layer of the upper capacitor of the DRAM portion, a gate electrode layer for a transistor of the DRAM portion, and a control gate layer of the flash memory portion are formed simultaneously from the same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.