Thin film transistor having an asymmetrical lightly doped drain structure
US5442215A · kind A · utility
20Cited by
4References
4Claims
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Key dates
| Filing date | Mar 31, 1994 |
| Grant date | Aug 15, 1995 |
| Priority date | — |
| Expiry date | Mar 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6708
Abstract
A thin film transistor having an asymmetrical LDD structure which can remove a kink phenomenon (i.e., unstable operation characteristic) of the TFT. According to the TFT, a dual LDD junction structure is formed in the drain region by dual doping, while no junction is formed in the source region so as to remove the energy difference existing at the junction in the source region. On the source electrode, silicide may be formed in order to minimize the contact resistance between the electrode and the metallic terminal thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.