Gee-Sung Chae
147Patents
15h-index
87Co-inventors
89Inventor score
Filing activity: Oct 22, 1993 → Feb 3, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9983424B2 | Foldable display device | Emerging Cross-Sectional Technologies | 59 | Active |
| US7704806B2 | Thin film transistor having silicon nanowire and method of fabricating the same | Emerging Cross-Sectional Technologies | 47 | Active |
| US7652740B2 | Array substrate for LCD device having dual metal-layer gate and data lines and manufacturing method thereof | Physics | 45 | Expired |
| US6861368B2 | Array substrate for a liquid crystal display device having an improved contact property and fabricating method thereof | Physics | 34 | Expired |
| US6337292B1 | Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6956236B1 | Wiring, TFT substrate using the same and LCD | Electricity | 27 | Expired |
| US5442215A | Thin film transistor having an asymmetrical lightly doped drain structure | Electricity | 20 | Expired |
| US7198968B2 | Method of fabricating thin film transistor array substrate | Electricity | 19 | Expired |
| US6819368B2 | Array substrate of a liquid crystal display and method of fabricating the same | Physics | 18 | Expired |
| US6894735B2 | Array substrate of liquid crystal display device | Physics | 18 | Expired |
| US7804174B2 | TFT wiring comprising copper layer coated by metal and metal oxide | Electricity | 17 | Expired |
| US7206050B2 | IPS type LCD and method for fabricating the same | Physics | 16 | Expired |
| US7416681B2 | Etching solution for multiple layer of copper and molybdenum and etching method using the same | Electricity | 15 | Active |
| US6765270B2 | Thin film transistor array gate electrode for liquid crystal display device | Electricity | 15 | Expired |
| US6958312B2 | Composition and method for removing copper-compatible resist | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6989874B2 | Substrate structure of liquid crystal display and fabrication method thereof | Physics | 14 | Expired |
| US6998770B2 | Organic electroluminescent device and fabricating method thereof | Physics | 13 | Expired |
| US7312099B2 | Organic electroluminescent device and fabricating method thereof | Physics | 13 | Active |
| US6515726B2 | LCD panel with low resistance interconnection | Physics | 12 | Expired |
| US6881679B2 | Etching solution for etching Cu and Cu/Ti metal layer of liquid crystal display device and method of fabricating the same | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7176535B2 | Thin film transistor array gate electrode for liquid crystal display device | Electricity | 12 | Expired |
| US7196748B2 | In-plane switching mode liquid crystal display device and method for manufacturing the same | Physics | 11 | Expired |
| US5403755A | Method for fabricating a thin film transistor | Electricity | 10 | Expired |
| US7384900B2 | Composition and method for removing copper-compatible resist | Chemistry; Metallurgy | 10 | Expired |
| US7679085B2 | Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.