Pattern formation material and pattern formation method
US5443690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1994 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Mar 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern formation material capable of keeping dimensional accuracy of a pattern at a desired level even after a polymer is left standing for a long time after exposure and before baking, and a method of forming such a pattern formation material, which comprises a copolymer containing units containing a polycyclic aromatic ring, a condensed ring having at least one aromatic ring, or an aromatic ring having, as a substitution group, an alicyclic group, a branched alkyl or a halogen, and units from a monomer containing a photosensitive group, and a compound generating an acid by irradiation to ultraviolet rays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.