Method of making ohmic contacts to a complementary III-V semiconductor device
US5444016A · kind A · utility
Inventors
Key dates
| Filing date | Jun 25, 1993 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Jun 25, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention encompasses a method for providing the same ohmic material contact (120, 122, 124) to N-type and P-type regions (70, 80) of a III-V semiconductor device. Specifically, an N-type region (70) extending through a semiconductor structure is formed. Additionally, a P-type region (80) extending through the substrate is formed. The P-type region (80) may be heavily doped with P-type impurities (81). A first ohmic region (117) is formed, contacting the N-type region (70). The first ohmic region may comprise an ohmic material including metal and an N-type dopant. A second ohmic region (119) is formed, contacting the P-type region (80, 81). The second ohmic region comprises the same ohmic material as the first ohmic region. One ohmic material that may be used is nickel-germanium-tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.