Method for manufacturing semiconductor device by forming insulator-layer to suppress bubble formation
US5444026A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1993 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Jun 10, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention forms a intermediate layer between a conductive layer and BPSG layer. In one embodiment, this intermediate layer is a buffer layer that absorbs excess P ions from the BPSG layer to suppress the formation of bubbles and thereby prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer. In the second embodiment the intermediate layer is a thin nitride layer, which prevents the conductive layer and BPSG layer from being in direct contact with each other to suppress the formation of bubbles and also prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.