Inventor · Hwaseong-si, KR

Jin-Gi Hong

19Patents
7h-index
44Co-inventors
66Inventor score

Filing activity: Jun 10, 1993 → May 20, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US6635586B2 Method of forming a spin-on-glass insulation layer Electricity 21 Expired
US5444026A Method for manufacturing semiconductor device by forming insulator-layer to suppress bubble formation Electricity 15 Expired
US6489252B2 Method of forming a spin-on-glass insulation layer Electricity 14 Expired
US9065033B2 Light emitting device package Electricity 12 Active
US8399363B1 Methods of forming oxide-filled trenches in substrates using multiple-temperature oxide deposition techniques Electricity 11 Active
US6649503B2 Methods of fabricating integrated circuit devices having spin on glass (SOG) insulating layers and integrated circuit devices fabricated thereby Electricity 11 Expired
US9450151B2 Semiconductor light-emitting device Electricity 9 Active
US8536652B2 Non-volatile memory devices including low-K dielectric gaps in substrates Electricity 5 Active
US7074671B2 Gate electrode of a semiconductor device and method of forming the same Electricity 3 Expired
US8366827B2 Chamber inserts and apparatuses for processing a substrate Chemistry; Metallurgy 3 Active
US7311109B2 Method for cleaning a processing chamber and method for manufacturing a semiconductor device Emerging Cross-Sectional Technologies 2 Expired
US7902090B2 Method of forming a layer on a semiconductor substrate Chemistry; Metallurgy 1 Active
US9691957B2 Light emitting device package Electricity 1 Active
US7439192B2 Method of forming a layer on a semiconductor substrate Chemistry; Metallurgy 1 Expired
US7314702B2 Composition for a bottom-layer resist Physics 1 Expired
US9165817B2 Method of grinding substrate and method of manufacturing semiconductor light emitting device using the same Electricity 0 Active
US7851125B2 Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device Physics 0 Active
US7820244B2 Method of forming a layer and method of removing reaction by-products Electricity 0 Active
US8241837B2 Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.