Electron-beam exposure system for reduced distortion of electron beam spot
US5444257A · kind A · utility
8Cited by
4References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 6, 1994 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Oct 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.