Electron tube comprising a semiconductor cathode
US5444328A · kind A · utility
13Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1993 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Nov 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/308
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structure (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant damage from, e.g., flashoners, during manufacture and use in a vacuum tube. The semiconductor zones (24, 27, 32, 33) are also utilized as electron sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.