Method for producing bipolar transistor having reduced base-collector capacitance
US5445976A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1994 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Aug 9, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
Abstract
The invention described herein includes, in one of its forms, a method for fabricating a bipolar transistor having a reduced base-collector capacitance. A specific embodiment includes forming a selectively etchable material 44 over a highly doped subcollector layer 42, removing portions of the selectively etchable material 44 and then growing collector 46, base 48, and emitter 50 layers over the structure. The selectively etchable material 44 may then be removed to form an undercut region between the highly doped subcollector layer 42 and the highly doped base 48. The structure provides the advantage of improved high-frequency and high-power operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.