Method for planarizing a semiconductor device having a amorphous layer
US5445996A · kind A · utility
56Cited by
16References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1993 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | May 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.