Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate
US5446304A · kind A · utility
13Cited by
2References
1Claims
0Family size
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Key dates
| Filing date | Sep 29, 1994 |
| Grant date | Aug 29, 1995 |
| Priority date | — |
| Expiry date | Sep 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.