Patent · US Expired

Temperature sensor

US5446437A · kind A · utility

30Cited by
7References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 1992
Grant dateAug 29, 1995
Priority date
Expiry dateDec 30, 2012

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/977
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is disposed on or under the dielectric diaphragm which is used for measuring the temperature. In the course of this, the Seebeck effect, as well as the temperature dependence of the electrical resistance, can be used for detection of any temperature changes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.