Shallow trench isolation with thin nitride liner
US5447884A · kind A · utility
168Cited by
11References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 1994 |
| Grant date | Sep 5, 1995 |
| Priority date | — |
| Expiry date | Jun 29, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming shallow trench isolation with a nitride liner layer for devices in integrated circuits solves a problem of recessing the nitride liner that led to unacceptable voids in the trench filler material by using a liner thickness of less than 5 nm. A densification step of a pyrogenic oxide anneal at 800.degree. C. not only drives out impurities and achieves the same density as a conventional argon anneal at 1000.degree. C., but also drastically reduces the thermal load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.