Inventor · New Windsor, NY, US

Herbert L. Ho

117Patents
23h-index
171Co-inventors
93Inventor score

Filing activity: Oct 29, 1993 → Jun 23, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7118986B2 STI formation in semiconductor device including SOI and bulk silicon regions Electricity 240 Expired
US5447884A Shallow trench isolation with thin nitride liner Emerging Cross-Sectional Technologies 168 Expired
US6319794A Structure and method for producing low leakage isolation devices Electricity 135 Expired
US8129797B2 Work function engineering for eDRAM MOSFETs Electricity 119 Active
US5763315A Shallow trench isolation with oxide-nitride/oxynitride liner Electricity 109 Expired
US6046487A Shallow trench isolation with oxide-nitride/oxynitride liner Electricity 90 Expired
US5876788A High dielectric TiO.sub.2 -SiN composite films for memory applications Electricity 64 Expired
US5827765A Buried-strap formation in a dram trench capacitor Electricity 60 Expired
US6140208A Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications Electricity 45 Expired
US5670805A Controlled recrystallization of buried strap in a semiconductor memory device Electricity 42 Expired
US7816728B2 Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications Electricity 39 Expired
US5643823A Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures Emerging Cross-Sectional Technologies 38 Expired
US8008713B2 Vertical SOI trench SONOS cell Electricity 35 Active
US7276751B2 Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating same Electricity 32 Expired
US5656535A Storage node process for deep trench-based DRAM Emerging Cross-Sectional Technologies 31 Expired
US5543348A Controlled recrystallization of buried strap in a semiconductor memory device Electricity 30 Expired
US6964897B2 SOI trench capacitor cell incorporating a low-leakage floating body array transistor Electricity 29 Expired
US5747866A Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures Emerging Cross-Sectional Technologies 29 Expired
US5356837A Method of making epitaxial cobalt silicide using a thin metal underlayer Electricity 29 Expired
US8120095B2 High-density, trench-based non-volatile random access SONOS memory SOC applications Physics 27 Active
US5792685A Three-dimensional device layout having a trench capacitor Electricity 27 Expired
US5844266A Buried strap formation in a DRAM trench capacitor Electricity 24 Expired
US6297127A Self-aligned deep trench isolation to shallow trench isolation Electricity 23 Expired
US5893735A Three-dimensional device layout with sub-groundrule features Electricity 21 Expired
US6815749B1 Backside buried strap for SOI DRAM trench capacitor Electricity 21 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.