Microwave plasma processing apparatus
US5449411A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1993 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Oct 19, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A microwave plasma processing apparatus is provided with a vacuum chamber, a substrate holder for mounting a substrate to be processed, a reactive gas feed port, a cleaning gas feed port, a plasma generation device for generating a processing plasma from the reactive gas and a cleaning plasma from the cleaning gas, and a high-frequency electric field application device for applying an electric field having a frequency that allows ions in the cleaning plasma to follow changes in the electric field. The high-frequency electric field application device is activated to apply the electric field to the cleaning plasma so as to remove substances that have been deposited on the surfaces of the vacuum chamber and substrate holder due to the processing of the substrate by the processing plasma, thereby cleaning up the vacuum chamber and substrate holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.