Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5451548A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1994 |
| Grant date | Sep 19, 1995 |
| Priority date | — |
| Expiry date | Mar 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of fabricating a stoichiometric gallium oxide (Ga.sub.2 O.sub.3) thin film with dielectric properties on at least a portion of a semiconducting, insulating or metallic substrate. The method comprises electron-beam evaporation of single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound combining relatively ionic oxide, such as Gd.sub.2 O.sub.3, with the more covalent oxide Ga.sub.2 O.sub.3 such as to deposit a uniform, homogeneous, dense Ga.sub.2 O.sub.3 thin film with dielectric properties on a variety of said substrates, the semiconducting substrates including III-V and II-VI compound semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.